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GTL2000_03 Datasheet, PDF (7/13 Pages) NXP Semiconductors – 22-bit bi-directional low voltage translator | |||
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Philips Semiconductors
22-bit bi-directional low voltage translator
Product data
GTL2000
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
CONDITIONS
VI/O
VSREF
VDREF
VGREF
IPASS
Tamb
Input/output voltage (Sn, Dn)
DC source reference voltage1
DC drain reference voltage
DC gate reference voltage
Pass transistor current
Operating ambient temperature range In free air
NOTE:
1. VSREF ⤠VDREF - 1.5 V for best results in level shifting applications.
LIMITS
Min
Max
0
5.5
0
5.5
0
5.5
0
5.5
â
64
-40
+85
UNIT
V
V
V
V
mA
°C
ELECTRICAL CHARACTERISTICS OVER RECOMMENDED OPERATING FREE-AIR TEMPERATURE RANGE
(unless otherwise noted)
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
MIN
TYP1
MAX
UNIT
VOL
Low level output voltage
VDD = 3.0 V; VSREF = 1.365 V; VSn or VDn = 0.175 V;
Iclamp = 15.2 mA
â
260
350
mV
VIK
Input clamp voltage
II = -18 mA
VGREF = 0
â
â
-1.2
V
IIH
Gate input leakage
VI = 5 V
VGREF = 0
â
â
5
µA
CI(GREF) Gate capacitance
VI = 3 V or 0
â
97.4
â
pF
CIO(OFF) Off capacitance
VO = 3 V or 0
VGREF = 0
â
7.4
â
pF
CIO(ON) On capacitance
VO = 3 V or 0
VGREF = 3 V
â
18.6
â
pF
VGREF = 4.5 V
â
3.5
5
VI = 0
VGREF = 3 V
VGREF = 2.3 V
IO = 64 mA
â
4.4
7
â¦
â
5.5
9
ron2
On-resistance
VGREF = 1.5 V
VGREF = 1.5 V
IO = 30 mA
â
67
105
â
9
15
â¦
VI = 2.4 V
VGREF = 4.5 V
VGREF = 3 V
IO = 15 mA
â
7
10
â
58
80
â¦
VI = 1.7 V
VGREF = 2.3 V
â
50
70
NOTES:
1. All typical values are measured at Tamb = 25 °C
2. Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch.
On-state resistance is determined by the lowest voltage of the two (Sn or Dn) terminals.
2003 Apr 01
7
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