BUK763R1-60E_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK763R1-60E
N-channel TrenchMOS standard level FET
10^-1
I_D
(A)
10^-2
10^-3
003aah028
min
typ max
10^-4
10^-5
10^-6
0
2
4
6
V_GS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
15
R_DSon
(mΩ)
10
5
003aaj709
5
5.5
6
V_GS(V) = 10
0
0
120
240 _ID(A) 360
T_j = 25 °C; t_p = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
2.4
a
1.8
003aag814
1.2
0.6
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig. 13. Gate charge waveform definitions
BUK763R1-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
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