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| BUK763R1-60E_15 Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK763R1-60E
N-channel TrenchMOS standard level FET
103
ID
(A)
102
Limit RDSon= VDS/ ID
003aaj701
tp =10 µ s
100 µ s
10
DC
1 ms
1
10 ms
100 ms
10-1
10-1
1
10
VDS(V)
102
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
minimum footprint ; mounted on a
printed-circuit board
Min Typ Max Unit
-
-
0.51 K/W
-
50
-
K/W
1
Zth(j-mb) δ = 0.5
(K/W)
0.2
10-1
0.1
0.05
0.02
10-2
single shot
003aaj702
P
δ = tp
T
10-3
10-6
10-5
10-4
10-3
10-2
tp
t
T
10-1
tp (s)
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK763R1-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 July 2012
© NXP B.V. 2012. All rights reserved
4 / 12
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