BUK7620-100A_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7620-100A
N-channel TrenchMOS standard level FET
100
I_D
(A)
80
60
40
20
0
0
03nd51
T_j = 175 °C
T_j = 25 °C
2
4
6
8
V_GS (V)
10
V_GS
(V)
8
6
03nd49
V_DD = 14 V
V_DD = 80 V
4
2
0
0
20
40
60
80
100
Q_G (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of turn-on
function of gate source voltage; typical values
gate charge; typical values
5
V_GS(th)
(V)
4
max
03aa32
50
R_DSon
(mΩ)
40
V_GS (V) = 5.5
6
03nd54
6.5 7
8 10
3
typ
30
2
min
20
1
10
0
−60
0
60
120
180
T_j (°C)
0
0
50
100
150
200
250
I_D (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK7620-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
7 of 13