BUK7620-100A_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

BUK7620-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 2 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
„ AEC Q101 compliant
„ Low conduction losses due to low
on-state resistance
„ Suitable for standard level gate drive
sources
„ Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
„ 12 V, 24 V and 42 V loads
„ Automotive and general purpose
power switching
„ Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1; see Figure 3
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 175 °C; see Figure 12;
see Figure 13
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 12;
see Figure 13
Avalanche ruggedness
E_DS(AL)S
non-repetitive
I_D = 60 A; V_sup ≤ 100 V;
drain-source
R_GS = 50 Ω; V_GS = 10 V;
avalanche energy T_j(init) = 25 °C; unclamped
Min Typ Max Unit
-
-
100 V
-
-
63 A
-
-
200 W
-
-
50 mΩ
-
17 20 mΩ
-
-
400 mJ