BUK7609-75A_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7609-75A
N-channel TrenchMOS standard level FET
10
V_GS (V)
9
8
7
6
5
4
3
2
1
0
0
V_DD = 14 V
50
03nb47
V_DD = 60 V
100 _{QG (nC)} 150
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
Fig 9. Gate-source voltage as a function of turn-on
gate charge; typical values
18
R_DSon
(mΩ)
16
V_GS (V) = 5.5
6 _6.5
03nb52
7
14
8
12
9
10
10
8
6
0 40 80 120 160 200 240 280 320 360
I_D (A)
Fig 10. Gate-source threshold voltage as a function of
junction temperature
2.4
a
03nb25
1.6
0.8
0
−60
0
60
120
180
T_j (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK7609-75A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
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