BUK7609-75A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7609-75A
N-channel TrenchMOS standard level FET
I_D ⁴⁰⁰
(A)
350
300
16 12 10
V_GS (V) = 20
9.5
8.5
7.5
250
200
150
100
50
0
0
2
4
6
03nb51
6.5
5.5
4.5
8
10
V_DS (V)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
80
g_fs
(S)
70
60
50
40
30
20
10
0
03nb48
20
40
60 _{ID (A)} 80
I_D ¹¹⁰
(A) ₁₀₀
90
80
70
60
50
40
30
20
10
0
0
03nb49
T_j = 175 °C
T_j = 25 °C
2
4 _{VGS (V)} 6
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK7609-75A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 18 February 2011
© NXP B.V. 2011. All rights reserved.
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