BUK7528-55A_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7528-55A
N-channel TrenchMOS standard level FET
16
g_fs
(S)
12
003aaf463
2.5
a
2
003aaf464
8
1.5
4
1
0
0
20
40
V_DS > I_D x R_DSon
60
80
I_D (A)
0.5
−100
0
100
200
T_mb (°C)
Fig 10. Forward transconductance as a function of
drain current; typical values
I_D = 25 A; V_GS = 5 V
Fig 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
5
V_GS(th)
(V)
4
3
2
maximum
typical
minimum
003aaf465
10^−1
I_D
(A)
10^−2
10^−3
10^−4
003aaf466
2%
typical 98 %
1
10^−5
0
−100
0
100
200
T_j (°C)
I_D = 1 mA; V_DS = V_GS
Fig 12. Gate-source threshold voltage as a function of
junction temperature
10^−6
0
1
2
3
4
5
V_GS (V)
T_j = 25 °C; V_DS = V_GS
Fig 13. Sub-threshold drain current as a function of
gate-source voltage
BUK7528-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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