BUK7528-55A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7528-55A
N-channel TrenchMOS standard level FET
100
I_D
18
(A) 16
80 ₁₂
11.5
60
10
10.5
V_GS (V) = 11
40
20
0
0
2
4
6
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9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0 _4.5
8
10
V_DS (V)
T_j = 25 °C
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
70
R_DS(on)
(mΩ)
60
50
40
30
6
6.5
7
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8
9
10
20
0
20
40
60
80
100
I_D (A)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
50
R_DS(on)
(mΩ)
40
30
20
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100
I_D
(A)
80
60
40
20
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T_j = 175 °C
T_j = 25 °C
10
6
10
14
18
22
V_GS (V)
T_j = 25 °C; I_D = 25 A
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
0
0
4
8
12
V_GS (V)
V_DS > I_D x R_DSon
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK7528-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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