BUK7513-75B_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7513-75B
N-channel TrenchMOS standard level FET
250
I_D
(A)
200
Label is V_GS (V)
150
100
50
0
0
2
4
03nm78
20
10
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
6
8
10
V_DS (V)
30
R_DSon
(mΩ)
25
20
15
10
5
5
03nm77
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
40
g_fs
(S)
30
03nm75
10^−3
20
10^−4
10
10^−5
10^−6
0
2
4
6
V_GS (V)
0
0
25
50
75
100
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7513-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 November 2010
© NXP B.V. 2010. All rights reserved.
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