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| BUK7513-75B_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7513-75B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS
VGS(th)
drain-source breakdown
voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
75 -
-
V
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
70 -
-
V
gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
2
3
4
V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
-
-
V
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
-
-
4.4 V
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
VDS = 75 V; VGS = 0 V; Tj = 175 °C
-
-
500 µA
VDS = 75 V; VGS = 0 V; Tj = 25 °C
-
0.02 1
µA
VDS = 0 V; VGS = 20 V; Tj = 25 °C
-
2
100 nA
VDS = 0 V; VGS = -20 V; Tj = 25 °C
-
2
100 nA
VGS = 10 V; ID = 25 A; Tj = 175 °C;
-
-
27 mâ¦
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
-
11.7 13 mâ¦
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
ID = 25 A; VDS = 60 V; VGS = 10 V;
-
Tj = 25 °C; see Figure 13
-
QGD
gate-drain charge
-
Ciss
input capacitance
Coss
output capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
-
Tj = 25 °C; see Figure 14
-
Crss
reverse transfer capacitance
-
td(on)
tr
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 â¦; VGS = 10 V;
-
RG(ext) = 10 â¦; Tj = 25 °C
-
td(off)
turn-off delay time
-
tf
fall time
-
LD
internal drain inductance
from contact screw on mounting base -
to centre of die ; Tj = 25 °C
from drain lead 6 mm from package to -
centre of die ; Tj = 25 °C
LS
internal source inductance
from source lead 6 mm from package -
to source bond pad ; Tj = 25 °C
Source-drain diode
40 -
nC
8
-
nC
15 -
nC
1983 2644 pF
322 386 pF
155 212 pF
18 -
ns
36 -
ns
55 -
ns
26 -
ns
3.5 -
nH
4.5 -
nH
7.5 -
nH
VSD
source-drain voltage
IS = 15 A; VGS = 0 V; Tj = 25 °C;
-
0.85 1.2 V
see Figure 15
trr
reverse recovery time
IS = 20 A; dIS/dt = -100 A/µs;
-
74 -
ns
VGS = -10 V; VDS = 30 V; Tj = 20 °C
Qr
recovered charge
IS = 20 A; dIS/dt = -100 A/µs;
-
94 -
nC
VGS = -10 V; VDS = 30 V; Tj = 25 °C
BUK7513-75B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 25 November 2010
© NXP B.V. 2010. All rights reserved.
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