BUK7509-75A_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7509-75A
N-channel TrenchMOS standard level FET
I_D ⁴⁰⁰
(A)
350
300
16 12 10
V_GS (V) = 20
9.5
8.5
7.5
250
200
150
100
50
0
0
2
4
6
03nb51
6.5
5.5
4.5
8
10
V_DS (V)
12
R_DSon
(mΩ)
11
10
9
8
7
6
5
4
5
03nb50
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
03aa35
min typ max
2
4
6
V_GS (V)
80
g_fs
(S)
70
60
50
40
30
20
10
0
03nb48
20
40
60 _{ID (A)} 80
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7509-75A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 21 February 2011
© NXP B.V. 2011. All rights reserved.
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