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| BUK7509-75A_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7509-75A
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
VGS(th)
gate-source threshold voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
tr
td(off)
tf
LD
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
LS
internal source inductance
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
VDS = 75 V; VGS = 0 V; Tj = 175 °C
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 12; see Figure 13
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VGS = 0 V; VDS 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 30 V; RL = 1.2 â¦; VGS = 10 V;
RG(ext) = 10 â¦; Tj = 25 °C
from contact screw on mounting
base to centre of die ; Tj = 25 °C
from drain lead 6 mm from package
to centre of die ; Tj = 25 °C
from source lead to source bond
pad ; Tj = 25 °C
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
IS = 20 A; dIS/dt = -100 A/µs;
VGS = -10 V; VDS = 30 V; Tj = 25 °C
Min Typ Max Unit
70 -
-
V
75 -
-
V
1
-
-
V
2
3
4
V
-
-
4.4 V
-
-
500 µA
-
0.05 10 µA
-
2
100 nA
-
2
100 nA
-
-
18.9 mâ¦
-
7.7 9
mâ¦
-
5068 6760 pF
-
1082 1300 pF
-
620 850 pF
-
35
-
ns
-
107 -
ns
-
183 -
ns
-
100 -
ns
-
3.5 -
nH
-
4.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
75
-
ns
-
270 -
nC
BUK7509-75A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 21 February 2011
© NXP B.V. 2011. All rights reserved.
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