BUK7509-55A_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7509-55A
N-channel TrenchMOS standard level FET
100
I_D
(A)
75
50
25
0
0
03nj15
T_j = 175 °C
T_j = 25 °C
2
4
6
8
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
03nj18
20
2
label is V_GS (V)
R_DSon
6 6.5 7 _{7.5 8}
9
a
(mΩ)
10
1.5
15
03ne89
1
20
10
0.5
5
0
100
200
300
400
I_D (A)
0
-60
0
60
120
180
Tj (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK7509-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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