BUK7509-55A_15 Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7509-55A
N-channel TrenchMOS standard level FET
400
I_D
(A)
300
200
100
0
0
03nj17
label is V_GS (V)
14
12
20
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
2
4
6
8
10
V_DS (V)
12
R_DSon
(mΩ)
10
03nj16
8
6
5
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
03aa35
min typ max
60
g_fs
(S)
40
03nj14
10^−4
20
10^−5
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7509-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
6 of 13