BUK7507-55B Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7607-55B
TrenchMOS™ standard level FET
300
ID
10
(A)
20
200
03nn63
Label is VGS (V)
9
8.5
8
7.5
7
6.5
100
6
5.5
5
4.5
0
0
2
4
6
8
10
VDS (V)
25
RDSon
(mΩ)
20
15
10
5
0
5
03nn62
10
15 _{VGS (V)} 20
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
25
03nn64
2
RDSon
(mΩ)
6
Label is VGS (V)
a
6.5
20
7 _7.5
1.5
8
15
9
1
10
10
0.5
5
03ne89
0
0
100
200 _{ID (A)} 300
0
-60
0
60
120
180
Tj (°C)
T_j = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11235
Product data
Rev. 01 — 15 May 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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