BUK7507-55B Datasheet, PDF (5/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
5. Characteristics
Table 4: Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V_(BR)DSS
V_GS(th)
drain-source breakdown
voltage
I_D = 0.25 mA; V_GS = 0 V
T_j = 25 °C
T_j = −55 °C
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS;
Figure 9
I_DSS
I_GSS
R_DSon
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
T_j = 25 °C
T_j = 175 °C
T_j = −55 °C
V_DS = 55 V; V_GS = 0 V
T_j = 25 °C
T_j = 175 °C
V_GS = ±20 V; V_DS = 0 V
V_GS = 10 V; I_D = 25 A;
Figure 7 and 8
Dynamic characteristics
T_j = 25 °C
T_j = 175 °C
Q_g(tot)
Q_gs
Q_gd
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
L_d
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
V_GS = 10 V; V_DD = 44 V;
I_D = 25 A; Figure 14
V_GS = 0 V; V_DS = 25 V;
f = 1 MHz; Figure 12
V_DD = 30 V; R_L = 1.2 Ω;
V_GS = 10 V; R_G = 10 Ω
from drain lead 6 mm from
package to center of die
from contact screw on
mounting base to center of
die SOT78
from upper edge of drain
mounting base to center of
die SOT404
L_s
internal source inductance from source lead to source
bond pad
BUK75/7607-55B
TrenchMOS™ standard level FET
Min
Typ
Max
Unit
55
-
-
V
50
-
-
V
2
3
4
V
1
-
-
V
-
-
4.4
V
-
0.02
1
µA
-
-
500
µA
-
2
100
nA
-
5.8
7.1
mΩ
-
-
14.2
mΩ
-
53
-
nC
-
12
-
nC
-
17
-
nC
-
2 820
3 760
pF
-
554
665
pF
-
200
274
pF
-
24
-
ns
-
52
-
ns
-
77
-
ns
-
41
-
ns
-
4.5
-
nH
-
3.5
-
nH
-
2.5
-
nH
-
7.5
-
nH
9397 750 11235
Product data
Rev. 01 — 15 May 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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