BUK7506-55B Datasheet, PDF (7/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/7606-55B
TrenchMOS™ standard level FET
350
ID
20
(A) ₁₀
280
98
7.5
210
140
03nl93
Label is VGS (V)
7
6.5
6
12
RDSon
(mΩ)
10
8
03nl92
5.5
70
5
4.5
0
0
2
4
6
8
10
VDS (V)
6
4
5
10
15
20
VGS (V)
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 25 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
03nl94
14
2
RDSon
Label is VGS (V)
(mΩ)
12
6
7
a
1.5
10
1
8
8
10
0.5
6
20
03ne89
4
0
70
T_j = 25 °C
140
210
280
350
ID (A)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11132
Product data
Rev. 01 — 31 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
7 of 15