BUK7207-30B_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7207-30B
N-channel TrenchMOS standard level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 20 A; V_GS = 0 V; T_j = 25 °C;
see Figure 15
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs;
Q_r
recovered charge
V_GS = -10 V; V_DS = 25 V; T_j = 25 °C
400
20
I_D
(A) ₁₄
300 ₁₂
03nk84
10
Label is V_GS (V)
9.5
9
8.5
8
7.5
200
7
6.5
6
100
5.5
5
4.5
0
0
2
4
6
8
10
V_DS (V)
12
R_DSon
(mΩ)
10
8
6
4
5
Min Typ Max Unit
-
0.85 1.2 V
-
43
-
ns
-
20
-
nC
03nk83
10
15
20
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
10^−3
10^−4
03aa35
min typ max
40
g_fs
(S)
30
20
03nk81
10
10^−5
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
BUK7207-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
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