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BUK7207-30B_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET
NXP Semiconductors
BUK7207-30B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
Coss
Crss
td(on)
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
tr
rise time
td(off)
tf
LD
LS
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 185 °C;
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
VDS = 30 V; VGS = 0 V; Tj = 185 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 185 °C;
see Figure 11; see Figure 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11; see Figure 12
ID = 25 A; VDS = 24 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
ID = 25 A; VDS = 24 V; VGS = 10 V;
Tj 25 °C; see Figure 13
ID = 25 A; VDS = 24 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
VDS = 25 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
VDS = 25 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) 10 Ω; Tj = 25 °C
VDS = 25 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
measured from drain to centre of die;
Tj = 25 °C
measured from source lead to source
bond pad; Tj = 25 °C
Min Typ Max Unit
30 -
-
V
27 -
-
V
2
3
4
V
0.9 -
-
V
-
-
4.4 V
-
-
500 µA
-
0.02 1
µA
-
2
100 nA
-
2
100 nA
-
-
13.3 mΩ
-
5.9 7
mΩ
-
34
-
nC
-
8
-
nC
-
10
-
nC
-
1684 2245 pF
-
625 750 pF
-
249 314 pF
-
14
-
ns
-
85
-
ns
-
55
-
ns
-
76
-
ns
-
2.5 -
nH
-
7.5 -
nH
BUK7207-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 23 February 2011
© NXP B.V. 2011. All rights reserved.
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