BUK7105-40ATE Datasheet, PDF (7/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7905-40ATE
TrenchPLUS standard level FET
400
ID
(A) ₁₀
300 20
8 _7.5
200
100
0
0
2
4
03ni86
Label is VGS (V)
7
6.5
6
5.5
5
4.5
4
6
8
10
VDS (V)
12
RDSon
(mΩ)
8
03ni88
4
0
4
8
12
16 _{VGS (V)} 20
T_j = 25 °C; t_p = 300 µs
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
T_j = 25 °C; I_D = 50 A
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
20
RDSon
(mΩ)
15
VGS = 5.5 V 6 V
6.5 V 7 V
03ni87
10
5
0
0
8V
10 V
20 V
100
200
300 _{ID (A)} 400
03ni30
2
a
1.6
1.2
0.8
0.4
0
-60
0
60
120 _{Tj (°C)} 180
T_j = 25 °C; t_p = 300µs
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
a = --------^R---^D----^S---^o---ⁿ-------
R _{D S o n ( 25 °C )}
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 11694
Product data
Rev. 01 — 20 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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