BUK7105-40ATE Datasheet, PDF (2/16 Pages) NXP Semiconductors – TrenchPLUS standard level FET

Philips Semiconductors
BUK71/7905-40ATE
TrenchPLUS standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
V_DS
V_DGS
V_GS
I_D
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T_mb = 25 °C; V_GS = 10 V;
Figure 2 and 3
-
-
-
[1] _-
[2] _-
I_DM
peak drain current
T_mb = 100 °C; V_GS = 10 V; Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs;
Figure 3
[2] _-
-
P_tot
total power dissipation
T_mb = 25 °C; Figure 1
-
I_GS(CL)
gate-source clamping current
continuous
-
t_p = 5 ms; δ = 0.01
-
T_stg
storage temperature
−55
T_j
junction temperature
−55
V_{isol(FET-TSD)} FET to temperature sense diode
-
isolation voltage
Source-drain diode
I_DR
reverse drain current (DC)
T_mb = 25 °C
[1] _-
[2] _-
I_DRM
peak reverse drain current
Avalanche ruggedness
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
-
E_DS(AL)S
non-repetitive avalanche energy
unclamped inductive load; I_D = 75 A;
-
V_DS ≤ 40 V; V_GS = 10 V;
R_GS = 50 Ω; starting T_j = 25 °C
Electrostatic discharge
V_esd
electrostatic discharge voltage, pins Human Body Model; C = 100 pF;
-
1,3,5
R = 1.5 kΩ
[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.
Max Unit
40
V
40
V
±20
V
155
A
75
A
75
A
620
A
272
W
10
mA
50
mA
+175 °C
+175 °C
±100 V
155
A
75
A
620
A
1.46 J
6
kV
9397 750 11694
Product data
Rev. 01 — 20 August 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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