BUK6E3R4-40C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6E3R4-40C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
Min Typ Max Unit
-
0.8 1.2 V
-
48
-
ns
-
82
-
nC
150
g_fs
(S)
120
90
60
30
0
0
003aae331
20
40
60
80
I_D (A)
12
R_DSon
(mΩ)
10
8
6
4
2
0
0
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5
10
15
V_GS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
100
I_D
(A)
80
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60
40
Tj = 175 °C
Tj = 25 °C
20
0
0
2
4 _{VGS (V)} 6
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
250
I_D
V_GS (V) = 10
6.0
5.0
(A)
200
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4.5
150
4.0
100
3.8
3.6
50
3.4
3.2
0
0
0.5
1
1.5
2
V_DS (V)
Fig 7. Transfer characteristics: drain current as a
Fig 8. Output characteristics: drain current as a
function of gate-source voltage; typical values
function of drain-source voltage; typical values
BUK6E3R4-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
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