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BUK6E3R4-40C_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET
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NXP Semiconductors
BUK6E3R4-40C
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Conditions
see Figure 4
vertical in free air
Min Typ Max Unit
-
-
0.74 K/W
-
60
-
K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
10−1
0.1
0.05
0.02
single pulse
10−2
003aae330
P
tp
δ= T
10−3
10−6
10−5
10−4
10−3
10−2
tp
T
10−1
tp (s)
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6E3R4-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 October 2010
© NXP B.V. 2010. All rights reserved.
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