BUK6507-55C Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic and standard level FET

NXP Semiconductors
BUK6507-55C
N-channel TrenchMOS logic and standard level FET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 25 V
Min Typ Max Unit
-
0.8 1.2 V
-
48
-
ns
-
86
-
nC
120
g_fs
(S)
90
003aae891
60
30
0
0
20
40
60
80
I_D (A)
T_j = 25°C; V_DS = 25 V
Fig 5. Forward transconductance as a function of
drain current; typical values
20
R_DSon
(mΩ)
16
003aae929
12
8
4
0
0
4
8
12 _{VGS (V)} 16
100
I_D
(A)
80
V_GS (V) = 10 5 4.5
003aae892
4
60
3.8
40
3.6
20
3.4
3.2
0
0
0.5
1
1.5
2
V_DS (V)
Fig 6.
T_j = 25°C; t_p = 300 μs
Output characteristics: drain current as a
function of drain-source voltage; typical values
003aae928
80
I_D
(A)
60
40
T_j = 175 °C
T_j = 25 °C
20
0
0
2
4 _VGS(V) 6
Fig 7. Drain-source on-state resistance as a function Fig 8. Transfer characteristics: drain current as a
of gate-source voltage; typical values
function of gate-source voltage; typical values
BUK6507-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 12 October 2010
© NXP B.V. 2010. All rights reserved.
7 of 14