BUK624R5-30C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK624R5-30C
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
t_rr
reverse recovery time I_S = 20 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 25 V
125
g_fs
(S)
100
75
50
25
0
0
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25
50
75
100
I_D (A)
40
RDS on
(m)
30
20
10
0
0
5
Min Typ Max Unit
-
0.8 1.2 V
-
46
-
ns
-
57
-
nC
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10
15
20
VGS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
100
I_D
(A)
75
10.0 5.0 4.5
50
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V_GS (V) = 4.0
3.8
3.6
25
3.4
3.2
0
0
0.5
1
1.5
2
V_DS (V)
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
100
ID
(A)
80
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60
40
20
0
0
Tj = 175 C
Tj = 25 C
2
4
6
VGS (V)
Fig 7. Output characteristics; drain current as a
Fig 8. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
BUK624R5-30C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 17 September 2010
© NXP B.V. 2010. All rights reserved.
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