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BUK624R5-30C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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BUK624R5-30C
N-channel TrenchMOS intermediate level FET
Rev. 2 â 17 September 2010
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
ï® AEC Q101 compliant
ï® Suitable for standard and logic level
gate drive sources
ï® Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
ï® 12 V Automotive systems
ï® Electric and electro-hydraulic power
steering
ï® Motors, lamps and solenoid control
ï® Start-Stop micro-hybrid applications
ï® Transmission control
ï® Ultra high performance power
switching
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDS
drain-source
Tj ⥠25 °C; Tj ⤠175 °C
voltage
ID
drain current
VGS = 10 V; Tmb = 25 °C;
see Figure 1
Ptot
total power
Tmb = 25 °C; see Figure 2
dissipation
Static characteristics
RDSon
drain-source
on-state
resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C; see Figure 11
Min Typ Max Unit
-
-
30 V
[1]
-
-
90 A
-
-
158 W
-
3.8 4.5 mâ¦
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