BUK6217-55C_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

NXP Semiconductors
BUK6217-55C
N-channel TrenchMOS intermediate level FET
Table 7. Characteristics …continued
Symbol Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 16
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 25 V
Min Typ Max Unit
-
0.9 1.2 V
-
43
-
ns
-
70 -
nC
100
I_D
(A)
80
60
40
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V_GS(V) = 10
6.0
5.0
4.5
4.0
20
3.8
3.6
3.4
0
0
0.5
1
1.5
2
2.5
V_DS(V)
50
I_D
(A)
40
30
20
10
0
0
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T_j = 175 °C T_j = 25 °C
2
4
6
V_GS(V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
100
R_DSon
(mΩ)
75
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50
g_fs
(S)
40
003aae801
30
50
20
25
10
0
0
4
8
12
16
20
V_GS(V)
0
0
10
20
30
40
50
I_D (A)
Fig 7. Drain-source on-state resistance as a function Fig 8. Forward transconductance as a function of
of gate-source voltage; typical values
drain current; typical values
BUK6217-55C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 9 July 2012
© NXP B.V. 2012. All rights reserved.
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