BUK6217-55C_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

BUK6217-55C
N-channel TrenchMOS intermediate level FET
Rev. 3 — 9 July 2012
Product data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features and benefits
 AEC Q101 compliant
 Suitable for standard and logic level
gate drive sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V and 24 V Automotive systems
 Electric and electro-hydraulic power
steering
 Motors, lamps and solenoid control
 Start-Stop micro-hybrid applications
 Transmission control
 Ultra high performance power
switching
1.4 Quick reference data
Table 1.
Symbol
V_DS
I_D
Quick reference data
Parameter
drain-source voltage
drain current
P_tot
total power dissipation
Static characteristics
R_DSon
drain-source on-state resistance
Dynamic characteristics
Q_GD
gate-drain charge
Avalanche ruggedness
E_DS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS = 10 V; T_mb = 25 °C;
see Figure 1
T_mb = 25 °C; see Figure 2
V_GS = 10 V; I_D = 12 A; T_j = 25 °C;
see Figure 11
I_D = 25 A; V_DS = 44 V; V_GS = 10 V;
see Figure 13; see Figure 14
I_D = 44 A; V_sup ≤ 55 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C;
unclamped
Min Typ Max Unit
-
-
55 V
-
-
44 A
-
-
80 W
-
16
19
mΩ
-
11.2 -
nC
-
-
45 mJ