BTA201 Datasheet, PDF (7/12 Pages) NXP Semiconductors – Triacs logic level

Philips Semiconductors
BTA201 series B, E and ER
Triacs logic level
7. Dynamic characteristics
Table 6: Dynamic characteristics
Symbol Parameter
Conditions
dV_D/dt
dI_com/dt
t_gt
rate of rise of
off-state voltage
rate of change of
commutating
current
gate-controlled
turn-on time
V_DM = 67 % V_DRM(max);
T_j = 125 °C; exponential
waveform; gate open
circuit
V_DM = 400 V; T_j = 125 °C;
dV_com/dt = 20 V/µs; gate
open circuit
V_DM = 400 V; T_j = 125 °C;
dV_com/dt = 10 V/µs; gate
open circuit
I_TM = 20 A;
V_D = V_DRM(max);
I_G = 0.1 A;
dI_G/dt = 5 A/µs
BTA201-600B
BTA201-800B
Min Typ Max
1000 -
-
BTA201-600E
BTA21-800E
BTA201-800ER
Min Typ Max
200 -
-
Unit
V/µs
12
-
-
2.5 -
-
A/ms
16
-
-
3.5 -
-
A/ms
-
2
-
-
2
-
µs
1.6
V_GT(Tj)
V_GT(25°C)
1.2
0.8
001aab101
3
I_GT(Tj)
I_GT(25°C)
2
(1)
(2)
(3)
1
003aaa959
0.4
−50
0
50
100
150
T_j (°C)
0
−50
0
(3)
(2)
(1)
50
100
150
T_j (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA201_SER_B_E_ER_2
Product data sheet
Rev. 02 — 13 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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