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BTA201 Datasheet, PDF (2/12 Pages) NXP Semiconductors – Triacs logic level
Philips Semiconductors
BTA201 series B, E and ER
Triacs logic level
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
BTA201-600B
TO-92
BTA201-600E
BTA201-800B
BTA201-800E
BTA201-800ER
Description
plastic single-ended leaded (through hole) package; 3 leads
4. Limiting values
Version
SOT54
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state voltage
BTA201-600B
BTA201-600E
BTA201-800B
BTA201-800E
BTA201-800ER
IT(RMS)
RMS on-state current
full sine wave; Tlead ≤ 54.3 °C;
see Figure 4 and 5
ITSM
non-repetitive peak on-state current full sine wave;
Tj = 25 °C prior to surge; see
Figure 2 and 3
t = 20 ms
t = 16.7 ms
I2t
I2t for fusing
t = 10 ms
dlT/dt
IGM
PGM
PG(AV)
Tstg
Tj
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
ITM = 1.5 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
over any 20 ms period
Min
[1] -
[1] -
-
-
-
-
-
-
-
-
-
-
-
−40
-
Max
Unit
600
V
600
V
800
V
800
V
800
V
1
A
12.5
13.7
0.78
50
2
5
0.1
+150
125
A
A
A2s
A/µs
A
W
W
°C
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/µs.
BTA201_SER_B_E_ER_2
Product data sheet
Rev. 02 — 13 January 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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