BSS84AKT Datasheet, PDF (7/16 Pages) NXP Semiconductors – 50 V, 150 mA P-channel Trench MOSFET

NXP Semiconductors
BSS84AKT
50 V, 150 mA P-channel Trench MOSFET
-0.20
I_D
(A)
V_GS = -10 V -4.0 V -3.5 V
-0.15
001aao124
-0.10
-3.0 V
-0.05
-2.5 V
-10^-3
I_D
(A)
-10^-4
-10^-5
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(1)
(2)
(3)
0
0
-1
-2
-3
-4
V_DS (V)
T_j = 25 °C
Fig 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
-10^-6
0
-0.5
-1.0
-1.5
-2.0
-2.5
V_GS (V)
T_j = 25 °C; V_DS = -5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
12
R_DSon
(Ω)
8
(1)
(2)
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(3)
(4)
14
R_DSon
(Ω)
10
001aao127
(1)
(5)
4
6
(2)
0
0
-0.1
-0.2
-0.3
-0.4
I_D (A)
T_j = 25 °C
(1) V_GS = -3.0 V
(2) V_GS = -3.5 V
(3) V_GS = -4.0 V
(4) V_GS = -5.0 V
(5) V_GS = -10.0 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
2
0
-2
-4
-6
-8
-10
V_GS (V)
I_D = -200 mA
(1) T_j = 150 °C
(2) T_j = 25 °C
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
BSS84AKT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 May 2011
© NXP B.V. 2011. All rights reserved.
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