BSS84AKT Datasheet, PDF (1/16 Pages) NXP Semiconductors – 50 V, 150 mA P-channel Trench MOSFET

BSS84AKT
50 V, 150 mA P-channel Trench MOSFET
Rev. 1 — 23 May 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
„ Logic-level compatible
„ Very fast switching
„ Trench MOSFET technology
„ ESD protection up to 1 kV
„ AEC-Q101 qualified
1.3 Applications
„ Relay driver
„ High-speed line driver
„ High-side loadswitch
„ Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
Min Typ Max Unit
T_j = 25 °C
-
-
-50 V
-20 -
20 V
V_GS = -10 V; T_amb = 25 °C ^[1] -
-
-150 mA
V_GS = -10 V; I_D = -100 mA;
-
4.5 7.5 Ω
T_j = 25 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².