BLF178XR_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLF178XR; BLF178XRS
Power LDMOS transistor
7.4 Graphical data
The following figures are measured in a class-AB production test circuit.
7.4.1 1-Tone CW pulsed

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V_DS = 50 V; I_Dq = 40 mA; f = 108 MHz; t_p = 100 s;
 = 20 %.
Fig 5. Power gain and drain efficiency as function of
output power; typical values





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V_DS = 50 V; I_Dq = 40 mA; f = 108 MHz; t_p = 100 s;
 = 20 %.
(1) P_L(1dB) = 61.3 dBm (1350 W)
(2) P_L(3dB) = 61.9 dBm (1550 W)
Fig 6. Output power as a function of input power;
typical values
BLF178XR_BLF178XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
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