|
BLF178XR_15 Datasheet, PDF (1/14 Pages) NXP Semiconductors – Power LDMOS transistor | |||
|
BLF178XR; BLF178XRS
Power LDMOS transistor
Rev. 4 â 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 128 MHz band.
Table 1. Application information
Test signal
CW
pulsed RF
f
(MHz)
108
108
VDS
PL
(V)
(W)
Gp
ï¨D
(dB)
(%)
50
1200
23
80
50
1400
28
72
1.2 Features and benefits
ï® Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 ïs with ï¤ of 20 %:
ïµ Output power = 1400 W
ïµ Power gain = 28 dB
ïµ Efficiency = 72 %
ï® Easy power control
ï® Integrated ESD protection
ï® Excellent ruggedness
ï® High efficiency
ï® Excellent thermal stability
ï® Designed for broadband operation (HF to 128 MHz)
ï® Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
ï® Industrial, scientific and medical applications
ï® Broadcast transmitter applications
|
▷ |