BLA6H1011-600_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – LDMOS avionics power transistor

NXP Semiconductors
BLA6H1011-600
LDMOS avionics power transistor
800
P_L
(W)
600
(1) (2)
001aal841
(3)
400
200
0
0
4
8
12
16
P_i (W)
f = 1030 MHz; I_Dq = 100 mA.
(1) T_h = −40 °C
(2) T_h = +25 °C
(3) T_h = +65 °C
Fig 11. Load power as a function of input power; typical values
8. Test information
Table 9. List of components
For test circuit see Figure 12.
Component
Description
C1, C4, C7
multilayer ceramic chip capacitor
C2
multilayer ceramic chip capacitor
C3, C5, C8
multilayer ceramic chip capacitor
C6, C9
multilayer ceramic chip capacitor
C10
multilayer ceramic chip capacitor
C11
electrolytic capacitor
R1
SMD resistor
R2
metal film resistor
R3
resistor
Value
82 pF
22 μF; 35 V
39 pF
1 nF
20 nF
47 μF; 63 V
56 Ω
51 Ω
11 Ω
[1] American Technical Ceramics type 800B or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 200B or capacitor of same quality.
Remarks
[1]
[2]
[2]
[3]
0603
BLA6H1011-600_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 22 April 2010
© NXP B.V. 2010. All rights reserved.
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