BLA6H1011-600_15 Datasheet, PDF (1/13 Pages) NXP Semiconductors – LDMOS avionics power transistor

BLA6H1011-600
LDMOS avionics power transistor
Rev. 01 — 22 April 2010
Product data sheet
1. Product profile
1.1 General description
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the
1030 MHz to 1090 MHz range.
Table 1. Test information
Typical RF performance at T_case = 25 °C; t_p = 50 μs; δ = 2 %; I_Dq = 100 mA; in a class-AB production
test circuit.
Mode of operation
f
V_DS P_L
G_p
η_D t_r
t_f
(MHz)
(V) (W) (dB) (%) (ns) (ns)
pulsed RF
1030 to 1090
48 600 17
52 11
5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
„ Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply
voltage of 48 V, an I_Dq of 100 mA, a t_p of 50 μs with δ of 2 %:
‹ Output power = 600 W
‹ Power gain = 17 dB
‹ Efficiency = 52 %
„ Easy power control
„ Integrated ESD protection
„ High flexibility with respect to pulse formats
„ Excellent ruggedness
„ High efficiency
„ Excellent thermal stability
„ Designed for broadband operation (1030 MHz to 1090 MHz)
„ Internally matched for ease of use
„ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)