BFG97 Datasheet, PDF (7/14 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG97
45
handbook, halfpage
d _im
(dB)
50
MBB799
55
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 750 mV; f_(p+q−r) = 443.25 MHz;
T_amb = 25 °C.
Fig.8 Intermodulation distortion as a function of
collector current.
45
handbook, halfpage
d _im
(dB)
50
MBB796
55
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 700 mV; f_(p+q−r) = 793.25 MHz;
T_amb = 25 °C.
Fig.9 Intermodulation distortion as a function of
collector current.
45
handbook, halfpage
d2
(dB)
50
MBB800
55
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 50 dBmV; f_(p+q) = 450 MHz;
T_amb = 25 °C.
Fig.10 Second order intermodulation distortion as
a function of collector current.
45
handbook, halfpage
d2
(dB)
50
MBB801
55
60
65
70
20
40
60
80
100
120
I _C (mA)
V_CE = 10 V; V_o = 50 dBmV; f_(p+q) = 810 MHz;
T_amb = 25 °C.
Fig.11 Second order intermodulation distortion as
a function of collector current.
September 1995
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