BFG97 Datasheet, PDF (6/14 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG97
1.2
han_Pd_tb_oo_tok, halfpage
(W)
1.0
0.8
0.6
0.4
0.2
0
0
50
MBB797
100
150
Ts
(
o
200
C)
Fig.4 Power derating curve.
120
handbook, halfpage
h _FE
80
MBB774
40
0
0
40
80
120
I _C (mA)
V_CE = 10 V; T_j = 25 °C.
Fig.5 DC current gain as a function of collector
current.
3
handbook, halfpage
C _re
(pF)
2
MBB798
1
0
0
10
VCE (V)
20
I_E = 0; f = 1 MHz; T_j = 25 °C.
Fig.6 Feedback capacitance as a function of
collector-emitter voltage.
8
handbook, halfpage
fT
(GHz)
6
MBB773
4
2
0
0
40
80 _{I C (mA)} 120
V_CE = 10 V; f = 500 MHz; T_j = 25 °C.
Fig.7 Transition frequency as a function of
collector current.
September 1995
6