BFG541 Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG541
handboo^–k,²h⁰alfpage
d _im
(dB)
–30
MEA977
–40
–50
–60
–70
10
20
30
40
50
60
I _C (mA)
Fig.10 Intermodulation distortion as a function of
collector current.
handboo^–k,²h⁰alfpage
d2
(dB)
–30
MEA976
–40
–50
–60
–70
10
20
30
40
50
60
I _C (mA)
Fig.11 Second order intermodulation distortion as
a function of collector current.
5
handbook, halfpage
Fmin
(dB)
4
3
2000 MHz
2
1000 MHz
900 MHz
1
500 MHz
Gass
Fmin
MRA666 ₂₀
Gass
(dB)
f = 900 MHz ₁₅
1000 MHz
10
2000 MHz
5
0
0
1
V_CE = 8 V.
−5
10
IC (mA)
100
Fig.12 Minimum noise figure and associated
available gain as functions of collector
current.
5
handbo_Fo_mk,_inhalfpage_{IC =10 mA}
(dB)
4
40 mA
Gass
3
MRA667
20
Gass
(dB)
15
10
2
5
40 mA
Fmin
1 ^{10 mA}
0
0
10²
V_CE = 8 V.
−5
10³
f (MHz)
10⁴
Fig.13 Minimum noise figure and associated
available gain as functions of frequency.
September 1995
7