BFG541 Datasheet, PDF (6/12 Pages) NXP Semiconductors – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFG541
In Figs 6 to 9, G_UM = maximum power gain; MSG =
maximum stable gain; G_max = maximum available gain.
handbook,²h⁵alfpage
gain
(dB)
20
MSG
15
10
MRA658
Gmax
GUM
5
0
0
20
40
V_CE = 8 V; f = 900 MHz.
60
80
IC (mA)
Fig.6 Gain as a function of collector current.
handbook,²h⁵alfpage
gain
(dB)
20
MRA659
15
10
Gmax
GUM
5
0
0
20
40
60
80
IC (mA)
V_CE = 8 V; f = 2 GHz.
Fig.7 Gain as a function of collector current.
handbook,⁵h⁰alfpage
gain
(dB)
40
30
20
10
0
10
GUM
MSG
10²
MRA660
Gmax
10³
10⁴
f (MHz)
I_C = 10 mA; V_CE = 8 V.
Fig.8 Gain as a function of frequency.
handbook,⁵h⁰alfpage
gain
(dB)
40
30
GUM
MSG
MRA661
20
10
0
10
Gmax
10²
10³
10⁴
f (MHz)
I_C = 40 mA; V_CE = 8 V.
Fig.9 Gain as a function of frequency.
September 1995
6