BCV61_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – NPN general-purpose double transistors

NXP Semiconductors
BCV61
NPN general-purpose double transistors
1200
h_FE
1000
(1)
800
600
(2)
mgt731
1200
V_BE
(mV)
1000
800
600
mgt732
(1)
(2)
400
(3)
200
400
(3)
200
0
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 9. BCV61C: DC current gain as a function of
collector current; typical values
0
10^−2
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 10. BCV61C: Base-emitter voltage as a function of
collector current; typical values
10⁴
V_CEsat
(mV)
10³
mgt733
10²
(1)
(3) (2)
10
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 11. BCV61C: Collector-emitter saturation voltage
as a function of collector current; typical
values
1200
V_BEsat
(mV)
1000
(1)
800
(2)
600
(3)
400
mgt734
200
0
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 10
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 12. BCV61C: Base-emitter saturation voltage as a
function of collector current; typical values
BCV61_4
Product data sheet
Rev. 04 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
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