BCV61_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN general-purpose double transistors

NXP Semiconductors
BCV61
NPN general-purpose double transistors
3. Ordering information
Table 3. Ordering information
Type number
Package
Name Description
BCV61
-
plastic surface-mounted package; 4 leads
BCV61A
BCV61B
BCV61C
4. Marking
Table 4. Marking codes
Type number
BCV61
BCV61A
BCV61B
BCV61C
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code^[1]
1M*
1J*
1K*
1L*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage
open base
-
V_EBS
emitter-base voltage
V_CE = 0 V
-
I_C
collector current
-
I_CM
peak collector current
-
I_BM
peak base current
-
Per device
P_tot
T_j
T_amb
T_stg
total power dissipation
junction temperature
ambient temperature
storage temperature
T_amb ≤ 25 °C
[1] _-
-
−65
−65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
Version
SOT143B
Max Unit
30
V
30
V
6
V
100
mA
200
mA
200
mA
250
mW
150
°C
+150 °C
+150 °C
BCV61_4
Product data sheet
Rev. 04 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
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