BAS40_15 Datasheet, PDF (7/22 Pages) SeCoS Halbleitertechnologie GmbH – Surface Mount Schottky Barrier Diodes

NXP Semiconductors
BAS40 series; 1PSxxSB4x series
General-purpose Schottky diodes
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per device
R_th(j-a)
thermal resistance from
junction to ambient
SOT23
SOT143B
SOT363 (1PS88SB48)
SOT416
SOT666 (BAS40-05V)
SOT666 (BAS40-07V)
SOD123F
SOD323
SOD523
SOD882
SOT323
R_th(j-sp)
thermal resistance from
junction to solder point
SOT363 (BAS40XY)
Conditions
in free air
Min Typ Max Unit
[1]
-
-
500 K/W
-
-
500 K/W
-
-
416 K/W
-
-
833 K/W
[2] _-
-
225 K/W
[2] _-
-
416 K/W
[2] _-
-
330 K/W
-
-
450 K/W
[2] _-
-
450 K/W
[2] _-
-
500 K/W
-
-
625 K/W
[3] _-
-
260 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Soldering point at pins 2, 3, 5 and 6.
7. Characteristics
Table 8. Characteristics
T_amb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
V_F
forward voltage
I_F = 1 mA
I_F = 10 mA
I_F = 40 mA
I_R
reverse current
V_R = 30 V
V_R = 40 V
C_d
diode capacitance
V_R = 0 V; f = 1 MHz
[1] Pulse test: t_p  300 s;   0.02.
Min Typ Max Unit
[1]
-
-
380 mV
-
-
500 mV
-
-
1
V
-
-
1
A
-
-
10 A
-
-
5
pF
BAS40_1PSXXSB4X_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 9 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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