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74HC244D-652 Datasheet, PDF (7/18 Pages) NXP Semiconductors – Octal buffer/line driver; 3-state Rev. 4 — 24 September 2012
◁
NXP Semiconductors
74HC244; 74HCT244
Octal buffer/line driver; 3-state
Table 7. Dynamic characteristics …continued
GND = 0 V; for load circuit see Figure 8.
Symbol Parameter
Conditions
Min
ten
enable time
nOE to nYn; see Figure 7
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
tdis
disable time
nOE to nYn or see Figure 7
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
tt
transition time
see Figure 6
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
CPD
power dissipation per buffer; VI = GND to VCC
capacitance
74HCT244
tpd
propagation delay nAn to nYn;
see Figure 6
ten
enable time
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
nOE to nYn; VCC = 4.5 V; see
Figure 7
tdis
disable time
nOE to nYn; VCC = 4.5 V; see
Figure 7
tt
transition time
VCC = 4.5 V; see Figure 6
CPD
power dissipation per buffer;
capacitance
VI = GND to VCC  1.5 V
[2]
-
-
-
[3]
-
-
-
[4]
-
-
-
[5]
-
[1]
-
-
[2]
-
[3]
-
[4]
-
[5]
-
[1] tpd is the same as tPHL and tPLH.
[2] ten is the same as tPZH and tPZL.
[3] tdis is the same as tPHZ and tPLZ.
[4] tt is the same as tTHL and tTLH.
[5] CPD is used to determine the dynamic power dissipation (PD in W):
PD = CPD  VCC2  fi  N +  (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
 (CL  VCC2  fo) = sum of outputs.
25 C
Typ
36
13
10
39
14
11
14
5
4
35
13
11
15
15
5
35
40 C to +125 C Unit
Max Max
Max
(85 C) (125 C)
150
190
30
38
26
33
225 ns
45 ns
38 ns
150
190
30
38
26
33
225 ns
45 ns
38 ns
60
75
12
15
10
13
-
-
90 ns
18 ns
15 ns
- pF
22
28
-
-
30
38
25
31
12
15
-
-
33 ns
- ns
45 ns
38 ns
18 ns
- pF
74HC_HCT244
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 24 September 2012
© NXP B.V. 2012. All rights reserved.
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