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TDA8354Q Datasheet, PDF (6/16 Pages) NXP Semiconductors – Full bridge current driven vertical deflection output circuit in LVDMOS | |||
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Philips Semiconductors
Full bridge current driven vertical deï¬ection
output circuit in LVDMOS
Preliminary speciï¬cation
TDA8354Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
DC supply
VP
supply voltage
Vï¬b
ï¬yback supply voltage
Vertical circuit
Io(p-p)
Vo(A)
Vo(B)
I1,2,3,11,12,13
output current (peak-to-peak value)
output voltage (pin 9)
output voltage (pin 5)
current into or out of
pins 1 to 3 and 11 to 13
V1,2,3,11,12,13 peak voltage on pins 1 to 3 and 11 to 13
Flyback switch
Io(Vï¬b)
peak output current
Thermal data (in accordance with IEC 747-1)
Tstg
Tamb
Tj
storage temperature
operating ambient temperature
junction temperature
Miscellaneous
tsc
short-circuiting time
Ii/o
current into any pin
current out of any pin
VESD
electrostatic handling
note 1
note 2
note 3
+1.5 à VP(max); note 4
â1.5 à VP(max); note 4
note 5
note 6
â
â
â
â
â
â20
â0.5
â
â55
â25
â
â
â
â200
â
â
18
V
68
V
3.2
A
68
V
VP
V
+20
mA
VP
V
±1.6
A
+150 °C
+75
°C
150
°C
1
h
+200 mA
â
mA
±300 V
±2000 V
Notes
1. When the pin voltage exceeds 70 V the device behaves like a power zener diode thus limiting the voltage.
2. Internally limited by thermal protection; switching point â170 °C.
3. Up to VP = 18 V.
4. At Tj(max).
5. Machine model: equivalent to discharge a 200 pF capacitor through a 0 ⦠series resistor. Except pin 7: ±250 V.
6. Human body model: equivalent to discharge a 100 pF capacitor through a 1.5 k⦠series resistor. Except pin 7:
±1500 V.
1998 Sep 03
6
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