TDA8351 Datasheet, PDF (6/16 Pages) NXP Semiconductors – DC-coupled vertical deflection circuit

Philips Semiconductors
DC-coupled vertical deflection circuit
Product specification
TDA8351
CHARACTERISTICS
V_P = 17.5 V; T_amb = 25 °C; V_FB = 45 V; f_i = 50 Hz; I_I(sb) = 400 µA; measured in test circuit of Fig.3; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
DC supply
V_P
operating supply voltage
V_FB
flyback supply voltage
I_P
supply current
9.0
V_P
note 1
V_P
no signal; no load
−
Vertical circuit
V_O
LE
V_O
V_DF
|I_os|
|V_os|
∆V_osT
output voltage swing (scan)
linearity error
output voltage swing (flyback)
V_O(A) − V_O(B)
forward voltage of the internal
efficiency diode (V_O(A) − V_FB)
output offset current
offset voltage at the input of the
feedback amplifier (V_I(fb) − V_O(B))
output offset voltage as a function
of temperature
I_diff = 0.6 mA (p-p);
V_diff = 1.8 V (p-p);
I_O = 3 A (p-p)
I_O = 3 A (p-p); note 2
I_O = 50 mA (p-p); note 2
I_diff = 0.3 mA;
I_O = 1.5 A
I_O = −1.5 A;
I_diff = 0.3 mA
I_diff = 0;
I_I(sb) = 50 to 500 µA
I_diff = 0;
I_I(sb) = 50 to 500 µA
I_diff = 0
19.8
−
−
−
−
−
−
−
V_O(A)
DC output voltage
I_diff = 0; note 3
−
G_vo
open-loop voltage gain (V_7-4/V_1-2) notes 4 and 5
−
open loop voltage gain
note 4
−
(V_7-4/V_9-4; V_1-2 = 0)
V_R
voltage ratio V_1-2/V_9-4
−
f_res
frequency response (−3 dB)
open loop; note 6
−
G_I
current gain (I_O/I_diff)
−
∆G_cT
current gain drift as a function of
−
temperature
I_I(sb)
I_FB
PSRR
V_I(DC)
V_I(CM)
I_bias
I_O(CM)
signal bias current
flyback supply current
power supply ripple rejection
DC input voltage
common mode input voltage
input bias current
common mode output current
50
during scan
−
note 7
−
−
I_I(sb) = 0
0
I_I(sb) = 0
−
∆I_I(sb) = 300 µA (p-p); −
f_i = 50 Hz; I_diff = 0
−
25
−
50
−
60
30
55
−
−
1
3
1
3
39
−
−
1.5
−
30
−
18
−
72
8.0
−
80
−
80
−
0
40
5 000
−
−
−
−
10^−4
400
500
−
100
80
−
2.7
−
−
1.6
0.1
0.5
0.2
−
V
V
V
mA
V
%
%
V
V
mA
mV
µV/K
V
dB
dB
dB
Hz
K
µA
µA
dB
V
V
µA
mA
1999 Sep 27
6