TDA8042M Datasheet, PDF (6/16 Pages) NXP Semiconductors – Quadrature demodulator

Philips Semiconductors
Quadrature demodulator
Product specification
TDA8042M
CHARACTERISTICS
V_CC = 5 V; T_amb = 25 °C; R_L(IQ) = 1 kΩ; measured in application circuit of Fig.4; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply
V_CC1
V_CC2
I_CC1
I_CC2
AGC
G_CR
G_VAGC
R_iVAGC
V_th
R_iVTH
I_det
supply voltage
supply voltage
supply current
supply current
gain control range
voltage gain control at pin 3
input level = V_i(RF)min
input level = V_i(RF)max
input resistance at pin 3
AGC threshold voltage
V_o = 1.6 V (peak-to-peak value)
V_o = 0.8 V (peak-to-peak value)
V_o = 0.4 V (peak-to-peak value)
VTH input resistance
maximum AGC detector output current
(absolute value)
4.75 5.0 5.25 V
4.75 5.0 5.25 V
V_CC1 = V_CC2 = 5.0 V 41
51
61
mA
V_CC1 = V_CC2 = 5.0 V 13
16.5 20
mA
note 1
note 2
note 3
21
29
−
dB
0.5
−
3.5
−
−
20
2
V
4.5
V
−
kΩ
−
3.6
−
V
−
2.4
−
V
−
1.8
−
V
−
10
−
kΩ
−
1
−
mA
QPSK demodulator
f_i(RF)
R_i(RF)
X_i(RF)
V_i(RF)
∆E_Φ(I-Q)
RF input signal frequency
RF input impedance (resistive part)
RF input impedance (reactive part)
operating RF input level
phase matching error between I and Q
channels
350
f_i(RF) = 480 MHz
−
f_i(RF) = 480 MHz
−
note 1
57
note 4
−
∆E_G(I-Q)
∆G_tilt
F
gain matching error between I and Q channels note 5
−
gain tilt error between I and Q channels
note 6
−
DSB noise figure
source
−
impedance = 50 Ω;
note 7
d_3(IQ)
third-order intermodulation distortion in I and note 8
−
Q channels
−
650
50
−
19
−
−
78
0.7 2
0.15 0.8
0.3 0.5
13
17
50
−
MHz
Ω
Ω
dBµV
deg
dB
dB
dB
dB
1997 Apr 11
6