PSMN012-80PS Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 80 V 11 mΩ standard level MOSFET

NXP Semiconductors
PSMN012-80PS
N-channel 80 V 11 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol Parameter
Conditions
Source-drain diode
V_SD
source-drain voltage I_S = 25 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
t_rr
reverse recovery time I_S = 50 A; dI_S/dt = 100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 40 V
[1] Tested to JEDEC standards where applicable.
[2] Measured 3 mm from package.
Min Typ Max Unit
-
0.86 1.2 V
-
45
-
ns
-
64
-
nC
250
I_D
(A)
200
150
100
50
0
0
10
7
6.5
003aad029
V_GS (V) = 15
6
5.5
5
4.5
2
4
6
8
10
V_DS (V)
25
5
5.5
6
R_DSon
(mΩ)
20
003aad030
10
7
15
10
V_GS (V) = 15
5
0
50
100
150
200
250
I_D (A)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
003aad031
003aad035
100
4000
I_D
C_iss
(A)
80
C
(pF)
60
3000
40
T_j = 175 °C
20
25 °C
0
0
1
2
3
4
5
6
V_GS (V)
C_rss
2000
2
4
6
8 _{VGS (V)} 10
Fig 7. Transfer characteristics: drain current as a
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
function of gate-source voltage; typical values
PSMN012-80PS_2
Product data sheet
Rev. 02 — 25 June 2009
© NXP B.V. 2009. All rights reserved.
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