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| PSMN012-80PS Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 80 V 11 mΩ standard level MOSFET | |||
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NXP Semiconductors
PSMN012-80PS
N-channel 80 V 11 m⦠standard level MOSFET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp ⤠10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
tp ⤠10 µs; pulsed; Tmb = 25 °C
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 74 A; Vsup ⤠80 V;
drain-source avalanche RGS = 50 â¦; unclamped
energy
Min Max Unit
-
80
V
-
80
V
-20 20
V
-
52
A
-
74
A
-
295 A
-
148 W
-55 175 °C
-55 175 °C
-
74
A
-
295 A
-
100 mJ
80
003aad009
120
ID
(A)
Pder
(%)
60
80
40
40
20
03aa16
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN012-80PS_2
Product data sheet
Rev. 02 â 25 June 2009
© NXP B.V. 2009. All rights reserved.
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